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| AO6701 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description The AO6701 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. Standard Product AO6701 is Pb-free (meets ROHS & Sony 259 specifications). AO6701L is a Green Product ordering option. AO6701 and AO6701L are electrically identical. Features VDS (V) = -30V ID = -2.3A (VGS = -10V) RDS(ON) < 135m (VGS = -10V) RDS(ON) < 185m (VGS = -4.5V) RDS(ON) < 265m (VGS = -2.5V) SCHOTTKY VDS (V) = 20V, IF = 1A, VF<0.5V@0.5A D A S G K N/C D K 16 25 34 G S A TSOP6 Absolute Maximum Ratings TA=25C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage Gate-Source Voltage TA=25C Continuous Drain Current A Pulsed Drain Current B MOSFET -30 12 -2.3 -1.8 -15 Schottky Units V V A VGS TA=70C ID IDM VKA TA=25C TA=70C TA=25C IF IFM TA=70C PD TJ, TSTG Symbol RJA RJL RJA RJL Schottky reverse voltage Continuous Forward Current A Pulsed Forward Current Power Dissipation Junction and Storage Temperature Range Parameter: Thermal Characteristics MOSFET t 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C Thermal Characteristics Schottky t 10s Maximum Junction-to-Ambient A A Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Lead C B 20 2 1 1.15 0.7 -55 to 150 Typ 78 106 64 109.4 136.5 58.5 10 0.92 0.59 -55 to 150 Max 110 150 80 135 175 80 V A W C Units C/W C/W AO6701 Electrical Characteristics (TJ=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=-250A, VGS=0V VDS=-24V, VGS=0V TJ=55C VDS=0V, VGS=12V VDS=VGS ID=-250A VGS=-4.5V, VDS=-5V VGS=-10V, ID=-2.3A RDS(ON) Static Drain-Source On-Resistance TJ=125C VGS=-4.5V, ID=-2A VGS=-2.5V, ID=-1A gFS VSD IS Forward Transconductance VDS=-5V, ID=-2.3A IS=-1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current -0.6 -15 107 154 135 195 8 -0.85 -1 -1.35 409 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 55 42 12 4.9 VGS=-4.5V, VDS=-15V, ID=-2.0A 0.6 1.6 6.9 VGS=-10V, VDS=-15V, RL=7.5, RGEN=3 IF=-2.0A, dI/dt=100A/s 3.3 38.5 13.2 15 8 0.39 0.5 0.1 20 34 5.2 0.8 10 135 190 185 265 -1 Min -30 -1 -5 100 -1.4 Typ Max Units V A nA V A m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC V mA pF ns nC DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=-2.0A, dI/dt=100A/s SCHOTTKY PARAMETERS VF Forward Voltage Drop IF=0.5A Irm CT trr Qrr Maximum reverse leakage current Junction Capacitance SchottkyReverse Recovery Time Schottky Reverse Recovery Charge VR=16V VR=16V, TJ=125C VR=10V IF=1A, dI/dt=100A/s IF=1A, dI/dt=100A/s A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. Rev2: August 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AO6701 MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 -10V 15 -ID (A) -5V -4.5V -4V -ID(A) VGS=-3.5V 10 -3V 5 -2.5V 2 -2V 0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics 250 225 200 RDS(ON) (m) 175 150 125 100 75 50 0 1 2 3 4 5 6 0.8 0 25 75 100 125 150 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 50 175 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 350 300 250 RDS(ON) (m) 200 150 100 50 0 0 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C ID=-2A -IS (A) VGS=-10V VGS=-4.5V VGS=-2.5V Normalized On-Resistance 1.4 VGS=-2.5V 1.2 ID=-2A 1 1.6 VGS=-4.5V, VGS=-10V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 -VGS(Volts) Figure 2: Transfer Characteristics 6 125C 4 8 10 VDS=-5V 25C 1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics 25C 125C 125C Alpha & Omega Semiconductor, Ltd. AO6701 MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 4 Capacitance (pF) -VGS (Volts) 400 300 200 100 0 1 2 3 4 5 6 0 0 5 10 15 20 25 30 -VDS (Volts) Figure 8: Capacitance Characteristics Coss Crss 3 2 1 0 -Qg (nC) Figure 7: Gate-Charge Characteristics Ciss 600 VDS=-15V ID=-2.0A 500 100.0 T J(Max)=150C T A=25C -ID (Amps) 10.0 RDS(ON) limited 0.1s 1.0 1s 10s 0.1 0.1 1 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 DC 0 0.001 10ms 20 10s Power (W) 100s 1ms 15 10 5 T J(Max)=150C T A=25C 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZJA Normalized Transient Thermal Resistance D=T on/T T J,PK =T A+PDM.ZJA.RJA RJA=110C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD T on T 10 100 1000 0.01 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. AO6701 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY 1.0E+01 125C Capacitance (pF) 1.0E+00 IF (Amps) 80 60 40 20 25C 1.0E-03 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VF (Volts) Figure 12: Schottky Forward Characteristics 0 0 5 10 15 20 VKA (Volts) Figure 13: Schottky Capacitance Characteristics 100 f = 1MHz 1.0E-01 1.0E-02 0.5 1.0E-02 0.4 VF (Volts) IF=0.5A 0.3 Leakage Current (A) 1.0E-03 1.0E-04 VR=16V 0.2 1.0E-05 0.1 0 25 50 75 100 Temperature (C) 125 150 1.0E-06 0 25 50 75 100 125 150 Temperature (C) Figure 15: Schottky Leakage current vs. Junction Temperature Figure 14: Schottky Forward Drop vs. Junction Temperature 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=135C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Schottky Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. |
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